APT10M19BVRG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 28.91 EUR |
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Technische Details APT10M19BVRG Microchip Technology
Description: MOSFET N-CH 100V 75A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V.
Weitere Produktangebote APT10M19BVRG
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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APT10M19BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT10M19BVRG | Hersteller : Microchip Technology |
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APT10M19BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
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APT10M19BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
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APT10M19BVRG | Hersteller : Microchip Technology |
MOSFET FG, MOSFET, 100V, TO-247, RoHS |
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APT10M19BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 100V; 75A; Idm: 300A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 300A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 19mΩ Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |