APT1201R4BFLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 9A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details APT1201R4BFLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247, Type of transistor: N-MOSFET, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 9A, Power dissipation: 300W, Case: TO247, Gate-source voltage: ±30V, On-state resistance: 1.5Ω, Mounting: THT, Gate charge: 75nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R4BFLLG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT1201R4BFLLG | Hersteller : Microsemi Corporation | Description: MOSFET N-CH 1200V 9A TO-247 |
Produkt ist nicht verfügbar |
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APT1201R4BFLLG | Hersteller : Microchip / Microsemi | MOSFET FG, FREDFET, 1200V, TO-247, RoHS |
Produkt ist nicht verfügbar |
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APT1201R4BFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 9A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |