APT1201R4SFLLG Microchip / Microsemi
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details APT1201R4SFLLG Microchip / Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK, On-state resistance: 1.5Ω, Type of transistor: N-MOSFET, Power dissipation: 300W, Polarisation: unipolar, Mounting: SMD, Gate charge: 75nC, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Case: D3PAK, Pulsed drain current: 36A, Drain-source voltage: 1.2kV, Drain current: 9A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R4SFLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
APT1201R4SFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
APT1201R4SFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Mounting: SMD Gate charge: 75nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Case: D3PAK Pulsed drain current: 36A Drain-source voltage: 1.2kV Drain current: 9A |
Produkt ist nicht verfügbar |