APT13F120B Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 1200V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
auf Bestellung 223 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 25.48 EUR |
| 100+ | 20.68 EUR |
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Technische Details APT13F120B Microchip Technology
Description: MOSFET N-CH 1200V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 7A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V.
Weitere Produktangebote APT13F120B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT13F120B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT13F120B | Hersteller : MICROSEMI |
TO247/N-CHANNEL POWER FREDFET - MOS8 APT13F120 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT13F120B | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 1200V, TO-247 |
Produkt ist nicht verfügbar |
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APT13F120B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 50A; 625W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 8® Pulsed drain current: 50A Gate charge: 145nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 1.2Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |