APT14F100B

APT14F100B Microchip Technology


APT14F100B_S_D-1594073.pdf Hersteller: Microchip Technology
MOSFET FG, FREDFET, 1000V, TO-247
auf Bestellung 1216 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+18.93 EUR
100+ 16.38 EUR
Mindestbestellmenge: 3
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Technische Details APT14F100B Microchip Technology

Description: MOSFET N-CH 1000V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V.

Weitere Produktangebote APT14F100B nach Preis ab 19.32 EUR bis 19.32 EUR

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APT14F100B APT14F100B Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=6625 Description: MOSFET N-CH 1000V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.32 EUR
Mindestbestellmenge: 2
APT14F100B APT14F100B Hersteller : MICROCHIP (MICROSEMI) APT14F100B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT14F100B APT14F100B Hersteller : MICROCHIP (MICROSEMI) APT14F100B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247
Mounting: THT
Case: TO247
Power dissipation: 500W
Gate charge: 0.12µC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 980mΩ
Gate-source voltage: ±30V
Produkt ist nicht verfügbar