auf Bestellung 1216 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 18.93 EUR |
100+ | 16.38 EUR |
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Technische Details APT14F100B Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V.
Weitere Produktangebote APT14F100B nach Preis ab 19.32 EUR bis 19.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT14F100B | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
auf Bestellung 26 Stücke: Lieferzeit 21-28 Tag (e) |
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APT14F100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247 Mounting: THT Case: TO247 Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 14A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 980mΩ Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT14F100B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; 500W; TO247 Mounting: THT Case: TO247 Power dissipation: 500W Gate charge: 0.12µC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 14A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 980mΩ Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |