APT150GN60J Microchip / Microsemi
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Technische Details APT150GN60J Microchip / Microsemi
Description: IGBT MOD 600V 220A 536W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 536 W, Current - Collector Cutoff (Max): 25 µA, Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V.
Weitere Produktangebote APT150GN60J
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT150GN60J | Hersteller : Microchip Technology |
 Trans IGBT Module N-CH 600V |
Produkt ist nicht verfügbar |
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| APT150GN60J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT150GN60J | Hersteller : Microchip Technology |
Description: IGBT MOD 600V 220A 536W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 536 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT150GN60J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |