APT150GN60JDQ4 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 600V 220A 536W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 536 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 63.54 EUR |
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Technische Details APT150GN60JDQ4 Microchip Technology
Description: IGBT MOD 600V 220A 536W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 536 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V.
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auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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APT150GN60JDQ4 | Hersteller : Microchip Technology |
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APT150GN60JDQ4 | Hersteller : Microchip Technology |
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| APT150GN60JDQ4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT150GN60JDQ4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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