APT15F60S

APT15F60S Microsemi Corporation


APT15F60B%2CS.pdf Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 16A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 7A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2882 pF @ 25 V
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Technische Details APT15F60S Microsemi Corporation

Description: MOSFET N-CH 600V 16A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 7A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2882 pF @ 25 V.

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APT15F60S APT15F60S Hersteller : Microchip / Microsemi APT15F60B%2CS.pdf MOSFET
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