APT15GN120BDQ1G Microchip Technology
Hersteller: Microchip TechnologyIGBT Transistors IGBT Fieldstop Low Frequency Combi 1200 V 15 A TO-247
auf Bestellung 76 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 16.64 EUR |
| 100+ | 14.38 EUR |
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Technische Details APT15GN120BDQ1G Microchip Technology
Description: IGBT 1200V 45A 195W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/150ns, Switching Energy: 410µJ (on), 950µJ (off), Test Condition: 800V, 15A, 4.3Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 195 W.
Weitere Produktangebote APT15GN120BDQ1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT15GN120BDQ1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT15GN120BDQ1G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 45A 195000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT15GN120BDQ1G | Hersteller : Microchip Technology |
Description: IGBT 1200V 45A 195W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/150ns Switching Energy: 410µJ (on), 950µJ (off) Test Condition: 800V, 15A, 4.3Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 195 W |
Produkt ist nicht verfügbar |
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APT15GN120BDQ1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |