APT15GP60KG

APT15GP60KG Microsemi Corporation


APT15GP60K.pdf Hersteller: Microsemi Corporation
Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
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Technische Details APT15GP60KG Microsemi Corporation

Description: IGBT 600V 56A 250W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A, Supplier Device Package: TO-220 [K], IGBT Type: PT, Td (on/off) @ 25°C: 8ns/29ns, Switching Energy: 130µJ (on), 121µJ (off), Test Condition: 400V, 15A, 5Ohm, 15V, Gate Charge: 55 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 56 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 65 A, Power - Max: 250 W.

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APT15GP60KG Hersteller : Microchip / Microsemi APT15GP60K.pdf IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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