APT15GP90BDQ1G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3
Power dissipation: 250W
Gate charge: 60nC
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 23ns
Kind of package: tube
Case: TO247-3
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 21A
Mounting: THT
Collector-emitter voltage: 900V
Anzahl je Verpackung: 1 Stücke
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Technische Details APT15GP90BDQ1G MICROCHIP (MICROSEMI)
Description: IGBT 900V 43A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 9ns/33ns, Switching Energy: 200µJ (off), Test Condition: 600V, 15A, 4.3Ohm, 15V, Gate Charge: 60 nC, Part Status: Active, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 250 W.
Weitere Produktangebote APT15GP90BDQ1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT15GP90BDQ1G | Hersteller : Microchip Technology |
Description: IGBT 900V 43A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 9ns/33ns Switching Energy: 200µJ (off) Test Condition: 600V, 15A, 4.3Ohm, 15V Gate Charge: 60 nC Part Status: Active Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 60 A Power - Max: 250 W |
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| APT15GP90BDQ1G | Hersteller : Microchip Technology |
IGBT Transistors IGBT PT MOS 7 Combi 900 V 15 A TO-247 |
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APT15GP90BDQ1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 21A; 250W; TO247-3 Power dissipation: 250W Gate charge: 60nC Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Type of transistor: IGBT Turn-on time: 23ns Kind of package: tube Case: TO247-3 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 21A Mounting: THT Collector-emitter voltage: 900V |
Produkt ist nicht verfügbar |