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APT15GT120BRG MICROSEMI


6678-apt15gt120brg-apt15gt120srg-datasheet Hersteller: MICROSEMI
TO247/INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SINGLE APT15GT120
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Technische Details APT15GT120BRG MICROSEMI

Description: IGBT 1200V 36A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 10ns/85ns, Switching Energy: 585µJ (on), 260µJ (off), Test Condition: 800V, 15A, 5Ohm, 15V, Gate Charge: 105 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.

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APT15GT120BRG APT15GT120BRG Hersteller : Microchip Technology 6678-apt15gt120brg-apt15gt120srg-datasheet Description: IGBT 1200V 36A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
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APT15GT120BRG Hersteller : Microchip Technology APT15GT120B_SR_G__E-1593757.pdf IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
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