APT15GT60BRDQ1G Microchip Technology
auf Bestellung 74 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.33 EUR |
| 10+ | 12.87 EUR |
| 25+ | 12.17 EUR |
| 100+ | 10.53 EUR |
| 500+ | 8.97 EUR |
| 1000+ | 7.85 EUR |
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Technische Details APT15GT60BRDQ1G Microchip Technology
Description: IGBT 600V 42A 184W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 6ns/105ns, Switching Energy: 150µJ (on), 215µJ (off), Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 75 nC, Part Status: Active, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 184 W.
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| APT15GT60BRDQ1G | Hersteller : Microsemi |
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auf Bestellung 1050 Stücke: Lieferzeit 21-28 Tag (e) |
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APT15GT60BRDQ1G | Hersteller : Microchip Technology |
Description: IGBT 600V 42A 184W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 6ns/105ns Switching Energy: 150µJ (on), 215µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 75 nC Part Status: Active Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 184 W |
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