APT15GT60KRG

APT15GT60KRG Microsemi Corporation


APT15GT60KR(G).pdf Hersteller: Microsemi Corporation
Description: IGBT 600V 42A 184W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details APT15GT60KRG Microsemi Corporation

Description: IGBT 600V 42A 184W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-220 [K], IGBT Type: NPT, Td (on/off) @ 25°C: 6ns/105ns, Switching Energy: 150µJ (on), 215µJ (off), Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 75 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 184 W.