Technische Details APT17F120J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A, Technology: POWER MOS 8®, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 12A, Pulsed drain current: 104A, Power dissipation: 545W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.58Ω, Kind of channel: enhanced, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT17F120J
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT17F120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.58Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT17F120J | Hersteller : Microsemi Corporation | Description: MOSFET N-CH 1200V 18A SOT-227 |
Produkt ist nicht verfügbar |
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APT17F120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.58Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |