APT200GN60B2G Microchip Technology
auf Bestellung 11 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 59.88 EUR |
| 100+ | 51.71 EUR |
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Technische Details APT200GN60B2G Microchip Technology
Description: IGBT 600V 283A 682W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 50ns/560ns, Switching Energy: 13mJ (on), 11mJ (off), Test Condition: 400V, 200A, 1Ohm, 15V, Gate Charge: 1180 nC, Current - Collector (Ic) (Max): 283 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 682 W.
Weitere Produktangebote APT200GN60B2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT200GN60B2G | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 600V 283A 682000mW 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Type of transistor: IGBT Power dissipation: 682W Gate charge: 1180nC Technology: Field Stop Mounting: THT Case: T-Max Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : Microchip Technology |
Description: IGBT 600V 283A 682W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/560ns Switching Energy: 13mJ (on), 11mJ (off) Test Condition: 400V, 200A, 1Ohm, 15V Gate Charge: 1180 nC Current - Collector (Ic) (Max): 283 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 682 W |
Produkt ist nicht verfügbar |
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APT200GN60B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 158A; 682W; T-Max Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 158A Pulsed collector current: 600A Turn-on time: 130ns Turn-off time: 690ns Type of transistor: IGBT Power dissipation: 682W Gate charge: 1180nC Technology: Field Stop Mounting: THT Case: T-Max |
Produkt ist nicht verfügbar |