APT25GN120SG Microchip Technology
auf Bestellung 1278 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 19.08 EUR |
| 100+ | 16.48 EUR |
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Technische Details APT25GN120SG Microchip Technology
Description: IGBT 1200V 67A 272W D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: D3Pak, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/280ns, Test Condition: 800V, 25A, 1Ohm, 15V, Gate Charge: 155 nC, Current - Collector (Ic) (Max): 67 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 272 W.
Weitere Produktangebote APT25GN120SG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT25GN120SG | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 67A 272W 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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APT25GN120SG | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 67A 272W 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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APT25GN120SG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK Case: D3PAK Power dissipation: 272W Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT25GN120SG | Hersteller : Microchip Technology |
Description: IGBT 1200V 67A 272W D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 1Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
Produkt ist nicht verfügbar |
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APT25GN120SG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 33A; 272W; D3PAK Case: D3PAK Power dissipation: 272W Gate charge: 155nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
Produkt ist nicht verfügbar |