APT25GR120S

APT25GR120S Microchip Technology


9126293-apt25gr120b-s-a-pdf.pdf Hersteller: Microchip Technology
Trans IGBT Chip N-CH 1200V 75A 521W 3-Pin(2+Tab) D3PAK Tube
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Technische Details APT25GR120S Microchip Technology

Description: IGBT NPT 1200V 75A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: D3Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 742µJ (on), 427µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.

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APT25GR120S APT25GR120S Hersteller : MICROCHIP (MICROSEMI) 126293-apt25gr120b-apt25gr120s-datasheet Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Anzahl je Verpackung: 1 Stücke
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APT25GR120S Hersteller : MICROSEMI 126293-apt25gr120b-apt25gr120s-datasheet D3PAK/Ultra Fast NPT - IGBT APT25
Anzahl je Verpackung: 1 Stücke
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APT25GR120S APT25GR120S Hersteller : Microchip Technology 126293-apt25gr120b-apt25gr120s-datasheet Description: IGBT NPT 1200V 75A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
Produkt ist nicht verfügbar
APT25GR120S Hersteller : Microchip Technology APT25GR120B_S_A-1592847.pdf IGBT Transistors FG, IGBT, 1200V, 25A, TO-268
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APT25GR120S APT25GR120S Hersteller : MICROCHIP (MICROSEMI) 126293-apt25gr120b-apt25gr120s-datasheet Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK
Case: D3PAK
Power dissipation: 521W
Technology: NPT; POWER MOS 8®
Gate charge: 154nC
Kind of package: tube
Collector current: 25A
Type of transistor: IGBT
Turn-on time: 26ns
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Mounting: SMD
Collector-emitter voltage: 1.2kV
Pulsed collector current: 100A
Produkt ist nicht verfügbar