APT29F80J MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 173A
Polarisation: unipolar
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 19A
On-state resistance: 0.21Ω
Power dissipation: 543W
Anzahl je Verpackung: 1 Stücke
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Technische Details APT29F80J MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W, Case: ISOTOP, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 173A, Polarisation: unipolar, Semiconductor structure: single transistor, Drain-source voltage: 800V, Drain current: 19A, On-state resistance: 0.21Ω, Power dissipation: 543W, Anzahl je Verpackung: 1 Stücke.
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| APT29F80J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 19A; ISOTOP; screw; Idm: 173A; 543W Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 173A Polarisation: unipolar Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 19A On-state resistance: 0.21Ω Power dissipation: 543W |
Produkt ist nicht verfügbar |