APT30GN60BDQ2G Microchip Technology
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 5.93 EUR |
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Technische Details APT30GN60BDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/155ns, Switching Energy: 525µJ (on), 700µJ (off), Test Condition: 400V, 30A, 4.3Ohm, 15V, Gate Charge: 165 nC, Current - Collector (Ic) (Max): 63 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 203 W.
Weitere Produktangebote APT30GN60BDQ2G nach Preis ab 5.93 EUR bis 12.01 EUR
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APT30GN60BDQ2G | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 600V 63A 203W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30GN60BDQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 600V 63A 203000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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| APT30GN60BDQ2G | Hersteller : Microchip Technology |
IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 30 A TO-247 |
auf Bestellung 47 Stücke: Lieferzeit 14-28 Tag (e) |
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APT30GN60BDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 16ns Turn-off time: 255ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30GN60BDQ2G | Hersteller : MICROSEMI |
TO247/INSULATED GATE BIPOLAR TRANSISTOR FIELDSTOP LOW FREQ COMBI APT30GN60 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30GN60BDQ2G | Hersteller : Microchip Technology |
Description: IGBT TRENCH FS 600V 63A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/155ns Switching Energy: 525µJ (on), 700µJ (off) Test Condition: 400V, 30A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 203 W |
Produkt ist nicht verfügbar |
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APT30GN60BDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 16ns Turn-off time: 255ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |