APT30M19JVR

APT30M19JVR Microchip Technology


30m19jvr.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 300V 130A 4-Pin SOT-227 Tube
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Technische Details APT30M19JVR Microchip Technology

Description: MOSFET N-CH 300V 130A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V.

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APT30M19JVR Hersteller : MICROCHIP (MICROSEMI) 6207-apt30m19jvr-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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APT30M19JVR APT30M19JVR Hersteller : Microchip Technology 6207-apt30m19jvr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Produkt ist nicht verfügbar
APT30M19JVR APT30M19JVR Hersteller : Microchip Technology APT30M19JVR_B-1593586.pdf Discrete Semiconductor Modules FG, MOSFET, 300V, 0.019_OHM, SOT-227
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APT30M19JVR Hersteller : MICROCHIP (MICROSEMI) 6207-apt30m19jvr-datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Produkt ist nicht verfügbar