APT30M85BVRG Microchip Technology
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 22.26 EUR |
| 25+ | 19.13 EUR |
| 50+ | 17.36 EUR |
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Technische Details APT30M85BVRG Microchip Technology
Description: MOSFET N-CH 300V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V.
Weitere Produktangebote APT30M85BVRG nach Preis ab 22.67 EUR bis 26.86 EUR
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APT30M85BVRG | Hersteller : Microchip Technology |
 MOSFET MOSFET MOS5 300 V 85 mOhm TO-247 |
auf Bestellung 1558 Stücke: Lieferzeit 14-28 Tag (e) |
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APT30M85BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 Tube |
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APT30M85BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30M85BVRG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30M85BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Technology: POWER MOS 5® Mounting: THT Power dissipation: 300W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30M85BVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 300V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT30M85BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Technology: POWER MOS 5® Mounting: THT Power dissipation: 300W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ |
Produkt ist nicht verfügbar |