APT33GF120B2RDQ2G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT NPT 1200V 64A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
auf Bestellung 184 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 43.68 EUR |
| 100+ | 35.44 EUR |
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Technische Details APT33GF120B2RDQ2G Microchip Technology
Description: IGBT NPT 1200V 64A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A, IGBT Type: NPT, Td (on/off) @ 25°C: 14ns/185ns, Switching Energy: 1.315mJ (on), 1.515mJ (off), Test Condition: 800V, 25A, 4.3Ohm, 15V, Gate Charge: 170 nC, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 357 W.
Weitere Produktangebote APT33GF120B2RDQ2G nach Preis ab 37.99 EUR bis 43.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT33GF120B2RDQ2G | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS |
auf Bestellung 136 Stücke: Lieferzeit 14-28 Tag (e) |
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APT33GF120B2RDQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 64A 357W 3-Pin(3+Tab) T-MAX Tube |
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APT33GF120B2RDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT33GF120B2RDQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 64A 357000mW 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT33GF120B2RDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
Produkt ist nicht verfügbar |