APT33GF120LRDQ2G Microchip Technology
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 19.3 EUR |
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Technische Details APT33GF120LRDQ2G Microchip Technology
Description: IGBT 1200V 64A 357W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A, Supplier Device Package: TO-264 [L], IGBT Type: NPT, Td (on/off) @ 25°C: 14ns/185ns, Switching Energy: 1.315mJ (on), 1.515mJ (off), Test Condition: 800V, 25A, 4.3Ohm, 15V, Gate Charge: 170 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 357 W.
Weitere Produktangebote APT33GF120LRDQ2G nach Preis ab 19.3 EUR bis 19.3 EUR
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APT33GF120LRDQ2G | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 64A 357W 3-Pin(3+Tab) TO-264 Tube |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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| APT33GF120LRDQ2G | Hersteller : MICROSEMI |
TO264-3/high voltage power IGBTs APT33GF120 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-21 Tag (e) |
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APT33GF120LRDQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 64A 357000mW 3-Pin(3+Tab) TO-264 Tube |
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APT33GF120LRDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264 Type of transistor: IGBT Collector current: 30A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT33GF120LRDQ2G | Hersteller : Microchip Technology |
Description: IGBT 1200V 64A 357W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Supplier Device Package: TO-264 [L] IGBT Type: NPT Td (on/off) @ 25°C: 14ns/185ns Switching Energy: 1.315mJ (on), 1.515mJ (off) Test Condition: 800V, 25A, 4.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 357 W |
Produkt ist nicht verfügbar |
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APT33GF120LRDQ2G | Hersteller : Microchip Technology |
IGBT Transistors IGBT NPT Low Frequency Combi 1200 V 33 A TO-264 |
Produkt ist nicht verfügbar |
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APT33GF120LRDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; TO264 Type of transistor: IGBT Collector current: 30A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
Produkt ist nicht verfügbar |