APT34F100B2 Microchip Technology
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 56.84 EUR |
| 100+ | 49.09 EUR |
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Technische Details APT34F100B2 Microchip Technology
Description: MOSFET N-CH 1000V 35A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V, Power Dissipation (Max): 1135W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V.
Weitere Produktangebote APT34F100B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT34F100B2 | Hersteller : Microchip / Microsemi |
 MOSFET FG, FREDFET, 1000V, TO-247 T-MAX, RoHS |
auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
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| APT34F100B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 140A Power dissipation: 1135W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 380mΩ Mounting: THT Gate charge: 305nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT34F100B2 | Hersteller : MICROSEMI |
T-MAX/POWER FREDFET - MOS8 APT34F100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT34F100B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 35A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT34F100B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 21A; Idm: 140A; 1135W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 140A Power dissipation: 1135W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 380mΩ Mounting: THT Gate charge: 305nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |