APT34N80LC3G Microchip Technology

Description: MOSFET N-CH 800V 34A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V.