APT38F80B2 MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Mounting: THT
Case: TO247MAX
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 26A
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25.71 EUR |
| 10+ | 25.2 EUR |
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Technische Details APT38F80B2 MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 800V 41A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V.
Weitere Produktangebote APT38F80B2 nach Preis ab 25.2 EUR bis 45.37 EUR
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APT38F80B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW Mounting: THT Case: TO247MAX Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.24Ω Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 26A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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APT38F80B2 | Hersteller : Microchip Technology |
MOSFET FG, FREDFET, 800V, TO-247 T-MAX |
auf Bestellung 239 Stücke: Lieferzeit 14-28 Tag (e) |
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APT38F80B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 41A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V |
auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) |
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APT38F80B2 Produktcode: 125002 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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APT38F80B2 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 800V 41A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| APT38F80B2 | Hersteller : MICROSEMI |
TO247/41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET APT38F80 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |