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APT40GP60B2DQ2G Microchip Technology


APT40GP60B2DQ2_A-1859408.pdf Hersteller: Microchip Technology
IGBT Transistors IGBT PT MOS 7 Combi 600 V 40 A TO-247 MAX
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Technische Details APT40GP60B2DQ2G Microchip Technology

Description: IGBT 600V 100A 543W TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/64ns, Switching Energy: 385µJ (on), 350µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 135 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 543 W.

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APT40GP60B2DQ2G APT40GP60B2DQ2G Hersteller : MICROCHIP (MICROSEMI) 6266-apt40gp60b2dq2g-datasheet Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Produkt ist nicht verfügbar
APT40GP60B2DQ2G APT40GP60B2DQ2G Hersteller : Microchip Technology 6266-apt40gp60b2dq2g-datasheet Description: IGBT 600V 100A 543W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Produkt ist nicht verfügbar
APT40GP60B2DQ2G APT40GP60B2DQ2G Hersteller : MICROCHIP (MICROSEMI) 6266-apt40gp60b2dq2g-datasheet Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Produkt ist nicht verfügbar