APT40GP60SG

APT40GP60SG Microsemi Corporation


6265-apt40gp60bg-apt40gp60sg-datasheet Hersteller: Microsemi Corporation
Description: IGBT 600V 100A 543W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: D3Pak
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 352µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
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Technische Details APT40GP60SG Microsemi Corporation

Description: IGBT 600V 100A 543W D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Supplier Device Package: D3Pak, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/64ns, Switching Energy: 385µJ (on), 352µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 135 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 543 W.

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APT40GP60SG Hersteller : Microchip / Microsemi APT40GP60B_S_D-1593539.pdf IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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