APT40GR120S Microchip Technology
auf Bestellung 315 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 20.51 EUR |
| 100+ | 17.68 EUR |
| 250+ | 17.32 EUR |
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Technische Details APT40GR120S Microchip Technology
Description: IGBT 1200V 88A 500W D3PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: D3Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/163ns, Switching Energy: 1.38mJ (on), 906µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote APT40GR120S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| APT40GR120S | Hersteller : MICROSEMI |
 Ultra Fast NPT - IGBT APT40GR120Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-21 Tag (e) |
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APT40GR120S | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 88A 500W 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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APT40GR120S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 500W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: SMD Gate charge: 0.21µC Kind of package: tube Turn-on time: 47ns Turn-off time: 232ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT40GR120S | Hersteller : Microchip Technology |
Description: IGBT 1200V 88A 500W D3PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Supplier Device Package: D3Pak IGBT Type: NPT Td (on/off) @ 25°C: 22ns/163ns Switching Energy: 1.38mJ (on), 906µJ (off) Test Condition: 600V, 40A, 4.3Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
Produkt ist nicht verfügbar |
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APT40GR120S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 500W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: SMD Gate charge: 0.21µC Kind of package: tube Turn-on time: 47ns Turn-off time: 232ns |
Produkt ist nicht verfügbar |