APT45GP120BG Microchip Technology
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 43.34 EUR |
| 100+ | 37.47 EUR |
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Technische Details APT45GP120BG Microchip Technology
Description: IGBT 1200V 100A 625W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 18ns/102ns, Switching Energy: 900µJ (on), 904µJ (off), Test Condition: 600V, 45A, 5Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 170 A, Power - Max: 625 W.
Weitere Produktangebote APT45GP120BG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT45GP120BG | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 100A 625mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT45GP120BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 7®; PT Gate charge: 185nC Kind of package: tube Collector current: 54A Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 170A Type of transistor: IGBT Turn-on time: 47ns Turn-off time: 230ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT45GP120BG | Hersteller : Microchip Technology |
Description: IGBT 1200V 100A 625W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 18ns/102ns Switching Energy: 900µJ (on), 904µJ (off) Test Condition: 600V, 45A, 5Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 170 A Power - Max: 625 W |
Produkt ist nicht verfügbar |
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APT45GP120BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Case: TO247-3 Power dissipation: 625W Technology: POWER MOS 7®; PT Gate charge: 185nC Kind of package: tube Collector current: 54A Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 170A Type of transistor: IGBT Turn-on time: 47ns Turn-off time: 230ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |