APT45GP120J Microchip Technology
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 97.14 EUR |
| 500+ | 83.93 EUR |
| 1000+ | 82 EUR |
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Technische Details APT45GP120J Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 329 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V.
Weitere Produktangebote APT45GP120J
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT45GP120J | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Case: SOT227B Electrical mounting: screw Technology: POWER MOS 7®; PT Mechanical mounting: screw Collector current: 34A Pulsed collector current: 170A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT45GP120J | Hersteller : Microchip Technology |
Description: IGBT MOD 1200V 75A 329W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 329 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT45GP120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Case: SOT227B Electrical mounting: screw Technology: POWER MOS 7®; PT Mechanical mounting: screw Collector current: 34A Pulsed collector current: 170A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |