APT45GR65B Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT 650V 92A 357W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 900µJ (on), 580µJ (off)
Test Condition: 433V, 45A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 357 W
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.31 EUR |
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Technische Details APT45GR65B Microchip Technology
Description: IGBT 650V 92A 357W TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 15ns/100ns, Switching Energy: 900µJ (on), 580µJ (off), Test Condition: 433V, 45A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 92 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 168 A, Power - Max: 357 W.
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Preis ohne MwSt |
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APT45GR65B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Case: TO247-3 Power dissipation: 543W Technology: NPT; POWER MOS 8® Gate charge: 150nC Kind of package: tube Collector current: 56A Mounting: THT Collector-emitter voltage: 650V Pulsed collector current: 224A Type of transistor: IGBT Turn-on time: 47ns Turn-off time: 175ns Gate-emitter voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT45GR65B | Hersteller : Microchip Technology |
IGBT Transistors IGBT MOS 8 650 V 45 A TO-247 |
Produkt ist nicht verfügbar |
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APT45GR65B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Case: TO247-3 Power dissipation: 543W Technology: NPT; POWER MOS 8® Gate charge: 150nC Kind of package: tube Collector current: 56A Mounting: THT Collector-emitter voltage: 650V Pulsed collector current: 224A Type of transistor: IGBT Turn-on time: 47ns Turn-off time: 175ns Gate-emitter voltage: ±30V |
Produkt ist nicht verfügbar |