APT5010B2VRG Microchip Technology
auf Bestellung 43 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 44.51 EUR |
| 100+ | 38.43 EUR |
| 250+ | 37.6 EUR |
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Technische Details APT5010B2VRG Microchip Technology
Description: MOSFET N-CH 500V 47A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote APT5010B2VRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT5010B2VRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 500V 47A 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | Hersteller : MICROSEMI |
TMAX/POWER MOSFET - MOS5 APT5010 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5010B2VRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 47A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |