APT5010LVFRG Microchip Technology
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Technische Details APT5010LVFRG Microchip Technology
Description: MOSFET N-CH 500V 47A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote APT5010LVFRG
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APT5010LVFRG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010LVFRG | Hersteller : MICROSEMI |
TO264/POWER FREDFET - MOS5 500V 47A 0.100W APT5010 Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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APT5010LVFRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 47A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT5010LVFRG | Hersteller : Microchip Technology |
MOSFET FREDFET MOS5 500 V 10 Ohm TO-264 |
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APT5010LVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |