APT5016BLLG Microchip Technology
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 27.04 EUR |
| 100+ | 23.35 EUR |
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Technische Details APT5016BLLG Microchip Technology
Description: MOSFET N-CH 500V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V.
Weitere Produktangebote APT5016BLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT5016BLLG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT5016BLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5016BLLG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT5016BLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT5016BLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |