APT50GN120B2G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT 1200V 134A 543W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
Description: IGBT 1200V 134A 543W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.57 EUR |
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Technische Details APT50GN120B2G Microchip Technology
Description: IGBT 1200V 134A 543W TO-247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 28ns/320ns, Switching Energy: 4495µJ (off), Test Condition: 800V, 50A, 2.2Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 134 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 543 W.
Weitere Produktangebote APT50GN120B2G
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Verfügbarkeit |
Preis ohne MwSt |
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APT50GN120B2G | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 1200V 134A 543000mW 3-Pin(3+Tab) T-MAX Tube |
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APT50GN120B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs Anzahl je Verpackung: 1 Stücke |
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APT50GN120B2G | Hersteller : MICROSEMI |
TMAX/134 A, 1200 V, N-CHANNEL IGBT APT50GN120 Anzahl je Verpackung: 1 Stücke |
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APT50GN120B2G | Hersteller : Microchip Technology | IGBT Transistors IGBT Fieldstop Low Frequency Single 1200 V 50 A TO-247 MAX |
Produkt ist nicht verfügbar |
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APT50GN120B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs |
Produkt ist nicht verfügbar |