APT50GN60BDQ2G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.45 EUR |
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Technische Details APT50GN60BDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/230ns, Switching Energy: 1185µJ (on), 1565µJ (off), Test Condition: 400V, 50A, 4.3Ohm, 15V, Gate Charge: 325 nC, Part Status: Active, Current - Collector (Ic) (Max): 107 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 366 W.
Weitere Produktangebote APT50GN60BDQ2G nach Preis ab 15.18 EUR bis 17.58 EUR
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APT50GN60BDQ2G | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS |
auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
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APT50GN60BDQ2G | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT50GN60BDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT50GN60BDQ2G | Hersteller : MICROSEMI |
TO-247 [B]INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - COMBI Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GN60BDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs |
Produkt ist nicht verfügbar |