APT50GP60JDQ2 MICROCHIP (MICROSEMI)


6329-apt50gp60jdq2-datasheet Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APT50GP60JDQ2 MICROCHIP (MICROSEMI)

Description: IGBT MOD 600V 100A 329W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 329 W, Current - Collector Cutoff (Max): 525 µA, Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V.

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APT50GP60JDQ2 APT50GP60JDQ2 Hersteller : Microchip Technology 6329-apt50gp60jdq2-datasheet Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Produkt ist nicht verfügbar
APT50GP60JDQ2 Hersteller : Microchip Technology APT50GP60JDQ2_A-1593431.pdf IGBT Modules FG, IGBT-COMBI, 600V, 50A, SOT-227
Produkt ist nicht verfügbar
APT50GP60JDQ2 Hersteller : MICROCHIP (MICROSEMI) 6329-apt50gp60jdq2-datasheet Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar