APT50GR120B2 Microchip Technology
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Technische Details APT50GR120B2 Microchip Technology
Description: IGBT 1200V 117A 694W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 28ns/237ns, Switching Energy: 2.14mJ (on), 1.48mJ (off), Test Condition: 600V, 50A, 4.3Ohm, 15V, Gate Charge: 445 nC, Current - Collector (Ic) (Max): 117 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 694 W.
Weitere Produktangebote APT50GR120B2
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APT50GR120B2 | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: T-Max Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Collector-emitter voltage: 1.2kV Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® Anzahl je Verpackung: 1 Stücke |
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APT50GR120B2 | Hersteller : Microchip Technology |
Description: IGBT 1200V 117A 694W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 28ns/237ns Switching Energy: 2.14mJ (on), 1.48mJ (off) Test Condition: 600V, 50A, 4.3Ohm, 15V Gate Charge: 445 nC Current - Collector (Ic) (Max): 117 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 694 W |
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| APT50GR120B2 | Hersteller : Microchip Technology |
IGBT Modules FG, IGBT, 1200V, 50A, TO-247 T-MAX |
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APT50GR120B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: T-Max Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Collector-emitter voltage: 1.2kV Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® |
Produkt ist nicht verfügbar |