APT50GT120B2RG Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT NPT 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/230ns
Switching Energy: 2330µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 625 W
auf Bestellung 228 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 39.47 EUR |
| 100+ | 32.02 EUR |
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Technische Details APT50GT120B2RG Microchip Technology
Description: IGBT NPT 1200V 94A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, IGBT Type: NPT, Td (on/off) @ 25°C: 24ns/230ns, Switching Energy: 2330µJ (off), Test Condition: 800V, 50A, 4.7Ohm, 15V, Gate Charge: 340 nC, Part Status: Active, Current - Collector (Ic) (Max): 94 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 625 W.
Weitere Produktangebote APT50GT120B2RG nach Preis ab 34.32 EUR bis 39.75 EUR
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APT50GT120B2RG | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 50A, TO-247 T-MAX, RoHS |
auf Bestellung 44 Stücke: Lieferzeit 14-28 Tag (e) |
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APT50GT120B2RG | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT50GT120B2RG | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT50GT120B2RG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GT120B2RG | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 94A 625000mW 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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APT50GT120B2RG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max |
Produkt ist nicht verfügbar |