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APT50N60JCCU2

APT50N60JCCU2 Microchip Technology


1907123-apt50n60jccu2-rev3-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227 Tube
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Technische Details APT50N60JCCU2 Microchip Technology

Description: MOSFET N-CH 600V 50A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V.

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APT50N60JCCU2 APT50N60JCCU2 Hersteller : Microchip Technology 1907123-apt50n60jccu2-rev3-pdf.pdf Trans MOSFET N-CH 600V 50A 4-Pin SOT-227 Tube
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APT50N60JCCU2 Hersteller : MICROCHIP (MICROSEMI) 7123-apt50n60jccu2-datasheet Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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APT50N60JCCU2 APT50N60JCCU2 Hersteller : Microchip Technology 7123-apt50n60jccu2-datasheet Description: MOSFET N-CH 600V 50A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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APT50N60JCCU2 APT50N60JCCU2 Hersteller : Microchip Technology APT50N60JCCU2_Rev3-1592654.pdf Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SOT227
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APT50N60JCCU2 Hersteller : MICROCHIP (MICROSEMI) 7123-apt50n60jccu2-datasheet Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; ISOTOP; screw; Idm: 130A; 290W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: ISOTOP
Topology: boost chopper
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 290W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar