APT54GA60BD30

APT54GA60BD30 Microchip / Microsemi


APT54GA60B_S_E-1593099.pdf Hersteller: Microchip / Microsemi
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247
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Technische Details APT54GA60BD30 Microchip / Microsemi

Category: THT IGBT transistors, Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3, Mounting: THT, Case: TO247-3, Kind of package: tube, Gate charge: 158nC, Collector-emitter voltage: 600V, Collector current: 54A, Gate-emitter voltage: ±30V, Pulsed collector current: 161A, Turn-on time: 37ns, Features of semiconductor devices: integrated anti-parallel diode, Technology: POWER MOS 8®; PT, Power dissipation: 416W, Turn-off time: 291ns, Type of transistor: IGBT.

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APT54GA60BD30 APT54GA60BD30 Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=123655 Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 158nC
Collector-emitter voltage: 600V
Collector current: 54A
Gate-emitter voltage: ±30V
Pulsed collector current: 161A
Turn-on time: 37ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 416W
Turn-off time: 291ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
APT54GA60BD30 Hersteller : MICROSEMI index.php?option=com_docman&task=doc_download&gid=123655 TO-247 [B]INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - COMBI
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT54GA60BD30 APT54GA60BD30 Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=123655 Description: IGBT 600V 96A 416W TO247
Produkt ist nicht verfügbar
APT54GA60BD30 APT54GA60BD30 Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=123655 Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 54A; 416W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 158nC
Collector-emitter voltage: 600V
Collector current: 54A
Gate-emitter voltage: ±30V
Pulsed collector current: 161A
Turn-on time: 37ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Power dissipation: 416W
Turn-off time: 291ns
Type of transistor: IGBT
Produkt ist nicht verfügbar