APT58M80J Microchip Technology

Description: MOSFET N-CH 800V 60A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V.