APT60N60BCSG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 137 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 48.67 EUR |
| 100+ | 39.52 EUR |
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Technische Details APT60N60BCSG Microchip Technology
Description: MOSFET N-CH 600V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote APT60N60BCSG nach Preis ab 42.3 EUR bis 49.01 EUR
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APT60N60BCSG | Hersteller : Microchip Technology |
MOSFET MOSFET COOLMOS 600 V 60 A TO-247 |
auf Bestellung 32 Stücke: Lieferzeit 14-28 Tag (e) |
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APT60N60BCSG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube |
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APT60N60BCSG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 0.19µC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT60N60BCSG | Hersteller : MICROSEMI |
TO247/POWER MOSFET - COOLMOS APT60N60 Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT60N60BCSG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; Idm: 230A; 431W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 230A Power dissipation: 431W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 0.19µC Kind of channel: enhanced |
Produkt ist nicht verfügbar |