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APT70GR65B2SCD30

APT70GR65B2SCD30 Microchip Technology


132888-apt70gr65b2scd30-a-pdf.pdf Hersteller: Microchip Technology
Trans IGBT Chip N-CH 650V 134A 595mW Tube
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Technische Details APT70GR65B2SCD30 Microchip Technology

Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A, Supplier Device Package: T-MAX™ [B2], IGBT Type: NPT, Td (on/off) @ 25°C: 19ns/170ns, Test Condition: 433V, 70A, 4.3Ohm, 15V, Gate Charge: 305 nC, Current - Collector (Ic) (Max): 134 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 260 A, Power - Max: 595 W.

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APT70GR65B2SCD30 Hersteller : Microsemi Corporation Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: NPT
Td (on/off) @ 25°C: 19ns/170ns
Test Condition: 433V, 70A, 4.3Ohm, 15V
Gate Charge: 305 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 595 W
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APT70GR65B2SCD30 Hersteller : Microchip / Microsemi APT70GR65B2SCD30_A-1859457.pdf IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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