APT75GN60BDQ2G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT TRENCH FS 600V 155A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 47ns/385ns
Switching Energy: 2.5mJ (on), 2.14mJ (off)
Test Condition: 400V, 75A, 1Ohm, 15V
Gate Charge: 485 nC
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 536 W
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 24.28 EUR |
| 100+ | 20.96 EUR |
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Technische Details APT75GN60BDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 155A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/385ns, Switching Energy: 2.5mJ (on), 2.14mJ (off), Test Condition: 400V, 75A, 1Ohm, 15V, Gate Charge: 485 nC, Current - Collector (Ic) (Max): 155 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 536 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
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