APT8065SVRG Microchip Technology
auf Bestellung 37 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 34.06 EUR |
| 100+ | 29.41 EUR |
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Technische Details APT8065SVRG Microchip Technology
Description: MOSFET N-CH 800V 13A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Weitere Produktangebote APT8065SVRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT8065SVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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APT8065SVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: D3PAK Mounting: SMD Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT8065SVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 13A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT8065SVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: D3PAK Mounting: SMD Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
Produkt ist nicht verfügbar |