APT80GA90LD40 Microchip Technology
auf Bestellung 191 Stücke:
Lieferzeit 315-329 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.31 EUR |
| 100+ | 30.47 EUR |
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Technische Details APT80GA90LD40 Microchip Technology
Description: IGBT PT 900V 145A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Supplier Device Package: TO-264, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/149ns, Switching Energy: 1652µJ (on), 1389µJ (off), Test Condition: 600V, 47A, 4.7Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 239 A, Power - Max: 625 W.
Weitere Produktangebote APT80GA90LD40
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT80GA90LD40 | Hersteller : Microchip / Microsemi |
 IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 |
auf Bestellung 195 Stücke: Lieferzeit 14-28 Tag (e) |
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APT80GA90LD40 | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 900V 145A 625000mW 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT80GA90LD40 | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 900V 145A 625W 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT80GA90LD40 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264 Mounting: THT Gate charge: 200nC Collector-emitter voltage: 900V Collector current: 80A Gate-emitter voltage: ±30V Pulsed collector current: 239A Turn-on time: 49ns Case: TO264 Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 625W Turn-off time: 320ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| APT80GA90LD40 | Hersteller : MICROSEMI |
TO-264 APT80GA90 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT80GA90LD40 | Hersteller : Microchip Technology |
Description: IGBT PT 900V 145A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Supplier Device Package: TO-264 IGBT Type: PT Td (on/off) @ 25°C: 18ns/149ns Switching Energy: 1652µJ (on), 1389µJ (off) Test Condition: 600V, 47A, 4.7Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 239 A Power - Max: 625 W |
Produkt ist nicht verfügbar |
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APT80GA90LD40 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 80A; 625W; TO264 Mounting: THT Gate charge: 200nC Collector-emitter voltage: 900V Collector current: 80A Gate-emitter voltage: ±30V Pulsed collector current: 239A Turn-on time: 49ns Case: TO264 Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 625W Turn-off time: 320ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |