APT80GP60J Microchip Technology
Hersteller: Microchip Technology
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 99.45 EUR |
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Technische Details APT80GP60J Microchip Technology
Description: IGBT MOD 600V 151A 462W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 151 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 462 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V.
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Preis ohne MwSt |
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APT80GP60J | Hersteller : Microchip Technology | Trans IGBT Module N-CH 600V 151A 462000mW |
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APT80GP60J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT80GP60J | Hersteller : Microchip Technology | IGBT Modules FG, IGBT, 600V, 80A, SOT-227 |
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APT80GP60J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 68A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 330A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |