APT80GP60J

APT80GP60J Microchip Technology


6507-apt80gp60j-datasheet Hersteller: Microchip Technology
Description: IGBT MOD 600V 151A 462W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 151 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 462 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+99.45 EUR
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Technische Details APT80GP60J Microchip Technology

Description: IGBT MOD 600V 151A 462W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 151 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 462 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 9.84 nF @ 25 V.

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APT80GP60J APT80GP60J Hersteller : Microchip Technology 80gp60j.pdf Trans IGBT Module N-CH 600V 151A 462000mW
Produkt ist nicht verfügbar
APT80GP60J Hersteller : MICROCHIP (MICROSEMI) 6507-apt80gp60j-datasheet Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT80GP60J Hersteller : Microchip Technology APT80GP60J_B-1593630.pdf IGBT Modules FG, IGBT, 600V, 80A, SOT-227
Produkt ist nicht verfügbar
APT80GP60J Hersteller : MICROCHIP (MICROSEMI) 6507-apt80gp60j-datasheet Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 68A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 68A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar